Titanium doped silicon layers with very high concentration | Zendy

J. Olea | Zendy; M. Toledano-Luque | Zendy; David Pastor | Zendy; G. González-Dı́az | Zendy; I. Mártil | Zendy

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Titanium doped silicon layers with very high concentration

Author(s) -

J. Olea,

M. Toledano-Luque,

David Pastor,

G. González-Dı́az,

I. Mártil

Publication year - 2008

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.2949258

Subject(s) - materials science , annealing (glass) , titanium , silicon , doping , silicide , ion implantation , wafer , hall effect , analytical chemistry (journal) , electron mobility , solubility , metallurgy , ion , optoelectronics , electrical resistivity and conductivity , chemistry , organic chemistry , engineering , chromatography , electrical engineering

Ion implantation of Ti into Si at high doses has been performed. After laser annealing the maximum average of substitutional Ti atoms is about 10(18) cm(-3). Hall effect measurements show n-type samples with mobility values of about 400 cm(2)/V s at room temperature. These results clearly indicate that Ti solid solubility limit in Si has been exceeded by far without the formation of a titanium silicide layer. This is a promising result toward obtaining of an intermediate band into Si that allows the design of a new generation of high efficiency solar cell using Ti implanted Si wafers

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