High-yield TiO2 nanowire synthesis and single nanowire field-effect transistor fabrication | Zendy

Jeong Min Baik | Zendy; Myung Hwa Kim | Zendy; Christopher Larson | Zendy; Xihong Chen | Zendy; Shujing Guo | Zendy; Alec M. Wodtke | Zendy; Martin Moskovits | Zendy

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High-yield TiO2 nanowire synthesis and single nanowire field-effect transistor fabrication

Author(s) -

Jeong Min Baik,

Myung Hwa Kim,

Christopher Larson,

Xihong Chen,

Shujing Guo,

Alec M. Wodtke,

Martin Moskovits

Publication year - 2008

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2949086

Subject(s) - nanowire , materials science , chemical vapor deposition , field effect transistor , rutile , nanotechnology , semiconductor , fabrication , vapor–liquid–solid method , layer (electronics) , transistor , atomic layer deposition , single crystal , optoelectronics , chemical engineering , chemistry , crystallography , medicine , alternative medicine , voltage , pathology , engineering , physics , quantum mechanics

We report a facile method for synthesizing single-crystal rutile TiO 2 nanowires using atmospheric-pressure, chemical vapor deposition with Ti and TiO as precursors. The synthesis is found to depend critically on the predeposition of a layer of metallic Ti on the Ni catalysts layer. The omission of this step seems previously to have impeded the efficient synthesis of titania nanowires. Single-nanowire field-effect transistors showed the TiO2 nanowires to be n -type semiconductors with conductance activation energy of ∼58 meV.open242

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