Erratum: “High-performance ZnO nanowire field effect transistors” [Appl. Phys. Lett. 89, 133113 (2006)]
Author(s) -
PaiChun Chang,
Zhiyong Fan,
Chung-Jen Chien,
Daniel Stichtenoch,
Carsten Ronning,
Jia Grace Lu
Publication year - 2009
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2948901
Subject(s) - nanowire , materials science , field effect transistor , optoelectronics , wide bandgap semiconductor , condensed matter physics , transistor , field (mathematics) , nanotechnology , engineering physics , physics , quantum mechanics , voltage , mathematics , pure mathematics
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