ac hopping admittance in spinel manganate negative temperature coefficient thermistor electroceramics
Author(s) -
Rainer Schmidt,
Andrew W. Brinkman
Publication year - 2008
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.2938029
Subject(s) - thermistor , admittance , manganate , spinel , materials science , temperature coefficient , electroceramics , condensed matter physics , grain boundary , relaxation (psychology) , electrical impedance , analytical chemistry (journal) , mineralogy , chemistry , thermodynamics , composite material , physics , microstructure , battery (electricity) , metallurgy , alternative medicine , pathology , psychology , microfabrication , social psychology , power (physics) , chromatography , quantum mechanics , fabrication , medicine
In this work, the ac admittance of a thick film nickel manganate spinel negative temperature coefficient thermistor ceramic system containing a glass phase is investigated. The dominating relaxation process is a grain boundary (GB) effect and has been investigated comprehensively. We present double-logarithmic plots of the specific admittance σ' vs ω and (σ'/σ_(dc)) vs ω, and specific impedance z vs −z"/ω and [(ρ_(dc)/z')−1] vs ω, in order to characterize GB charge transport. Using the complex admittance notation (σ*), an unusually low Jonscher exponent of frequency ~0.007 was obtained and the GB relaxation displayed close to ideal behavior
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