Open AccessPhotoluminescence and photoreflectance study of annealing effects on GaAs0.909Sb0.07N0.021 layer grown by gas-source molecular beam epitaxy
Author(s) -
HungPin Hsu,
Yen-Neng Huang,
YingSheng Huang,
Yangting Lin,
Ta-Chun Ma,
HaoHsiung Lin,
K. K. Tiong,
P. Sitarek,
J. Misiewicz
Publication year - 2008
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.2927490
Subject(s) - molecular beam epitaxy , photoluminescence , annealing (glass) , luminescence , materials science , atmospheric temperature range , quantum well , optoelectronics , condensed matter physics , epitaxy , layer (electronics) , optics , nanotechnology , laser , physics , metallurgy , meteorology
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