Open AccessEffects of well thickness on the spectral properties of In0.5Ga0.5As∕GaAs∕Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors
Author(s) -
G. Jolley,
Lan Fu,
Hark Hoe Tan,
C. Jagadish
Publication year - 2008
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2927487
Subject(s) - photodetector , chemical vapor deposition , quantum dot , optoelectronics , infrared , quantum well , materials science , gallium arsenide , infrared spectroscopy , optics , chemistry , physics , laser , organic chemistry
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom