Open AccessSaturation of intersubband transitions in p-doped GaAs∕AlGaAs quantum wells
Author(s) -
Robert Steed,
Mary Matthews,
Jonathan Plumridge,
Mark D. Frogley,
Chris C. Phillips,
Zoran Ikonić,
P. Harrison,
Oana Malis,
L. N. Pfeiffer,
Kenneth West
Publication year - 2008
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2920706
Subject(s) - condensed matter physics , quantum well , phonon , scattering , saturation (graph theory) , gallium arsenide , valence (chemistry) , doping , relaxation (psychology) , phonon scattering , materials science , chemistry , physics , optics , laser , psychology , social psychology , mathematics , combinatorics , organic chemistry
Optical saturation experiments have been performed on hh1-hh2 intersubband transitions in two samples of p-doped GaAs∕AlGaAs quantum wells. The transitions had energies of 183 and 160meV and the measured population relaxation times were 2±1.5 and 0.3±0.1ps, respectively. Modeling of the quantum wells with a 6×6 k⋅p method shows that intersubband scattering by LO phonons can account for these relaxation times. The valence bandstructure is typically more complicated than the conduction bandstructure in a quantum well but these measurements show that LO phonons are the dominant intersubband scattering mechanism in both cases.
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