Polyheteroarylene films with intrinsic switching mechanism for nonvolatile memory applications | Zendy

A.Yu. Zherebov | Zendy; A. A. Lachinov | Zendy; Jan Genoe | Zendy; A. R. Tameev | Zendy

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Polyheteroarylene films with intrinsic switching mechanism for nonvolatile memory applications

Author(s) -

A.Yu. Zherebov,

A. A. Lachinov,

Jan Genoe,

A. R. Tameev

Publication year - 2008

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2912348

Subject(s) - non volatile memory , materials science , electrode , optoelectronics , voltage , nanotechnology , mechanism (biology) , electrical engineering , chemistry , physics , quantum mechanics , engineering

This paper presents a polymer material for the nonvolatile memory applications. Current-voltage characteristics show the reproducible nonvolatile switching effect. The effect is observed not only when using two metallic electrodes but also when using two semiconducting electrodes, which reveals the intrinsic nature of the switching phenomenon. (C) 2008 American Institute of Physics.status: publishe

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