Open AccessImaging interstitial iron concentrations in boron-doped crystalline silicon using photoluminescence
Author(s) -
Daniel Macdonald,
J. Tan,
Thorsten Trupke
Publication year - 2008
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.2903895
Subject(s) - ingot , wafer , silicon , materials science , photoluminescence , boron , getter , doping , crystalline silicon , carrier lifetime , crystallographic defect , optoelectronics , metallurgy , crystallography , chemistry , organic chemistry , alloy
D.M. is supported by an Australian Research Council QEII Fellowship. The Centre of Excellence for Advanced Silicon Photovoltaics and Photonics at UNSW is funded by the Australian Research Council.
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