The effect of boron diffusions on the defect density and recombination at the (111) silicon-silicon oxide interface | Zendy

Hao Jin | Zendy; Wendy Jellett | Zendy; Chunxia Zhang | Zendy; Klaus Weber | Zendy; Andrew Blakers | Zendy; Peter J. Smith | Zendy

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The effect of boron diffusions on the defect density and recombination at the (111) silicon-silicon oxide interface

Author(s) -

Hao Jin,

Wendy Jellett,

Chunxia Zhang,

Klaus Weber,

Andrew Blakers,

Peter J. Smith

Publication year - 2008

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2903698

Subject(s) - electron paramagnetic resonance , silicon , recombination , boron , materials science , wafer , diffusion , carrier lifetime , oxide , spreading resistance profiling , analytical chemistry (journal) , molecular physics , crystallography , atomic physics , chemistry , nuclear magnetic resonance , optoelectronics , metallurgy , biochemistry , physics , organic chemistry , chromatography , gene , thermodynamics

A combination of electron paramagnetic resonance (EPR) and minority carrier lifetime measurements is used to unambiguously demonstrate that the presence of a B diffusion layer at the surface of oxidized Si (111) wafers causes a significant increase in the interface defect density as well as interface recombination, compared to undiffused surfaces. EPR measurements show a nearly three-fold increase in the Pb center density, while the lifetime measurements indicate an increase in surface recombination activity by a factor of more than two, for B diffused samples with a sheet resistance of ∼250Ω∕◻◻.

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