Mechanism of mobility increase of the two-dimensional electron gas in AlGaN∕GaN heterostructures under small dose gamma irradiation | Zendy

A. M. Kurakin | Zendy; S. А. Vitusevich | Zendy; Serhiy Danylyuk | Zendy; H. Hardtdegen | Zendy; N. Klein | Zendy; Z. Bougrioua | Zendy; B. A. Danilchenko | Zendy; Р. В. Конакова | Zendy; A. E. Belyaev | Zendy

Open Access

Mechanism of mobility increase of the two-dimensional electron gas in AlGaN∕GaN heterostructures under small dose gamma irradiation

Author(s) -

A. M. Kurakin,

S. А. Vitusevich,

Serhiy Danylyuk,

H. Hardtdegen,

N. Klein,

Z. Bougrioua,

B. A. Danilchenko,

Р. В. Конакова,

A. E. Belyaev

Publication year - 2008

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.2903144

Subject(s) - heterojunction , irradiation , fermi gas , impurity , materials science , relaxation (psychology) , wide bandgap semiconductor , condensed matter physics , electron mobility , dose dependence , electron , layer (electronics) , optoelectronics , chemistry , nanotechnology , physics , quantum mechanics , nuclear physics , medicine , psychology , social psychology , organic chemistry

The effect of a small dose of gamma irradiation on transport characteristics of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures was investigated. It is shown that the carrier concentration remains practically unchanged after an irradiation dose of 10(6) rad, while the 2DEG mobility exhibits a considerable increase. The results are explained within a model that takes into account the relaxation of elastic strains and structural-impurity ordering occurring in the barrier layer under irradiation. (C) 2008 American Institute of Physics

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research