Thickness dependent transport properties of compressively strained La0.88Sr0.12MnO3 ultrathin films
Author(s) -
Ravikant Prasad,
H. K. Singh,
M. P. Singh,
W. Prellier,
P. K. Siwach,
Amarjeet Kaur
Publication year - 2008
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.2902927
Subject(s) - materials science , polaron , condensed matter physics , activation energy , thin film , nanotechnology , chemistry , electron , physics , organic chemistry , quantum mechanics
Thickness dependent magnetic and transport properties of compressively strained La0.88Sr0.12MnO3 thin films grown on single crystalline SrTiO3 (100) substrates have been studied. All films exhibit a large enhancement of ∼130 K in TC/TIM as compared to that of the bulk target (TC∼175 K). This has been explained in terms of suppression of the cooperative Jahn–Teller distortion due to in-plane compressive strain. The TC/TIM of the 5 nm film is 315 K/318 K and slightly increases for film thicknesses ≤25 nm. At higher film thicknesses, ∼60 nm, the TC/TIM starts decreasing. At T>TIM, the electrical transport is due to thermally activated hopping of small polarons. The activation energy is found to be sensitive to film thickness and shows a minimum at around L∼15–25 nm, which corresponds to the maximum of TC/TIM. All films possess large magnetoresistances (MRs) in the vicinity of room temperature. Low as well as high field MRs are observed to nearly double as the film thickness increases from 5 nm (MR∼28%/3 T) to 60 nm (MR%∼50%/3 T). Thicker films (L≥25 nm) are found to exhibit sufficiently large temperature coefficients of resistivities, ∼4%–5%/K, which could be suitable for bolometric applications.
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