A GaAs metalorganic vapor phase epitaxy growth process to reduce Ge outdiffusion from the Ge substrate | Zendy

B. Galiana | Zendy; Ignacio ReyStolle | Zendy; Carlos Algora | Zendy; Kerstin Volz | Zendy; W. Stolz | Zendy

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A GaAs metalorganic vapor phase epitaxy growth process to reduce Ge outdiffusion from the Ge substrate

Author(s) -

B. Galiana,

Ignacio ReyStolle,

Carlos Algora,

Kerstin Volz,

W. Stolz

Publication year - 2008

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2901029

Subject(s) - epitaxy , substrate (aquarium) , metalorganic vapour phase epitaxy , layer (electronics) , materials science , monolayer , diffusion , optoelectronics , vapor phase , gallium arsenide , chemical vapor deposition , phase (matter) , diffusion barrier , chemistry , nanotechnology , oceanography , physics , thermodynamics , geology , organic chemistry

A barrier based on GaAs for controlling the Ge out diffusion has been developed by metalorganic vapor phase epitaxy. It is based on a thin GaAs layer (50 nm) grown at a low temperature (≈500 °C) on top of a predeposition layer, showing that GaAs prevents the Ge diffusing when it is grown at a low temperature. Additionally, two different predeposition monolayers have been compared, concluding that when the Ga is deposited first, the diffusions across the GaAsGe heterointerface decrease

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