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NEGATIVE AND POSITIVE MAGNETORESISTIVITY BEHAVIOURS AT VERY LOW TEMPERATURES IN THE VARIABLE RANGE HOPPING REGIME IN INSULATING N-TYPE INP SEMICONDUCTOR
Author(s) -
A. El kaaouachi,
R. Abdia,
A. Nafidi,
J. Hemine,
G. Biskupski,
U. Balachandran,
Kathleen Amm,
David Evans,
Eric B. Gregory,
Peter Lee,
Mike Osofsky,
Sastry Pamidi,
Chan Park,
Judy Wu,
M.D. Sumption
Publication year - 2008
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.2900344
Subject(s) - variable range hopping , condensed matter physics , materials science , thermal conduction , variable (mathematics) , range (aeronautics) , semiconductor , magnetoresistance , optoelectronics , physics , magnetic field , composite material , mathematics , mathematical analysis , quantum mechanics

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