Optical energies of AlInN epilayers | Zendy

K. Wang | Zendy; Robert Martin | Zendy; D. Amabile | Zendy; P. R. Edwards | Zendy; S. Hernández | Zendy; Emilio Nogales | Zendy; K.P. O’Donnell | Zendy; K. Lorenz | Zendy; E. Alves | Zendy; V. Matias | Zendy; A. Vantomme | Zendy; D. Wolverson | Zendy; I. M. Watson | Zendy

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Optical energies of AlInN epilayers

Author(s) -

K. Wang,

Robert Martin,

D. Amabile,

P. R. Edwards,

S. Hernández,

Emilio Nogales,

K.P. O’Donnell,

K. Lorenz,

E. Alves,

V. Matias,

A. Vantomme,

D. Wolverson,

I. M. Watson

Publication year - 2008

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.2898533

Subject(s) - photoluminescence , materials science , bowing , wide bandgap semiconductor , spectroscopy , condensed matter physics , excitation , photoluminescence excitation , optoelectronics , molecular physics , chemistry , physics , philosophy , theology , quantum mechanics

Optical energy gaps are measured for high-quality Al1−xInxN-on-GaN epilayers with a range of compositions around the lattice match point using photoluminescence and photoluminescence excitation spectroscopy. These data are combined with structural data to determine the compositional dependence of emission and absorption energies. The trend indicates a very large bowing parameter of 6 eV and differences with earlier reports are discussed. Very large Stokes' shifts of 0.4-0.8 eV are observed in the composition range 0.13

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