Effects of interface states on the transport properties of all-oxide La0.8Sr0.2CoO3∕SrTi0.99Nb0.01O3 p-n heterojunctions | Zendy

F. Y. Bruno | Zendy; Javier GarcíaBarriocanal | Zendy; Miriam G. Torija | Zendy; A. Rivera | Zendy; Z. Sefrioui | Zendy; Chris Leighton | Zendy; C. León | Zendy; J. Santamarı́a | Zendy

Open Access

Effects of interface states on the transport properties of all-oxide La0.8Sr0.2CoO3∕SrTi0.99Nb0.01O3 p-n heterojunctions

Author(s) -

F. Y. Bruno,

Javier GarcíaBarriocanal,

Miriam G. Torija,

A. Rivera,

Z. Sefrioui,

Chris Leighton,

C. León,

J. Santamarı́a

Publication year - 2008

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2887905

Subject(s) - heterojunction , materials science , capacitance , quantum tunnelling , oxide , condensed matter physics , relaxation (psychology) , optoelectronics , chemical physics , chemistry , electrode , physics , psychology , social psychology , metallurgy

Electrical transport properties of heteroepitaxial p-n junctions made of La_(0.8)Sr_(0.2)CoO_(3) and SrTi_(0.99)Nb_(0.01)O_(3) were studied. Junctions display highly rectifying current-voltage characteristics over a wide temperature range (20–300 K). Two distinct transport mechanisms are identified: tunneling assisted by interface states at T<130 K and diffusion/recombination at higher temperatures. Capacitance-voltage characteristics are used to determine the junction built-in potential at different frequencies. A capacitance relaxation is found due to charge trapping at interface states. Interface states, which deeply affect transport, are discussed in connection to charge-transfer processes related to the polarity mismatch at the interface

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