Influence of an ultrathin GaAs interlayer on the structural properties of InAs∕InGaAsP∕InP (001) quantum dots investigated by cross-sectional scanning tunneling microscopy | Zendy

J. M. Ulloa | Zendy; S. Anantathanasarn | Zendy; P. J. van Veldhoven | Zendy; P. M. Koenraad | Zendy; R. Nötzel | Zendy

Open Access

Influence of an ultrathin GaAs interlayer on the structural properties of InAs∕InGaAsP∕InP (001) quantum dots investigated by cross-sectional scanning tunneling microscopy

Author(s) -

J. M. Ulloa,

S. Anantathanasarn,

P. J. van Veldhoven,

P. M. Koenraad,

R. Nötzel

Publication year - 2008

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2884692

Subject(s) - quantum dot , scanning tunneling microscope , materials science , deposition (geology) , quantum tunnelling , optoelectronics , gallium arsenide , nanotechnology , paleontology , sediment , biology

Cross-sectional scanning tunneling microscopy is used to study at the atomic scale how the structural properties of InAs∕InGaAsP∕InP quantum dots (QDs) are modified when an ultrathin (0–1.5 ML) GaAs interlayer is inserted underneath the QDs. Deposition of the GaAs interlayer suppresses the influence of the As∕P exchange reaction on QD formation and leads to a planarized QD growth surface. A shape transition from quantum dashes, which are strongly dissolved during capping, to well defined QDs takes place when increasing the GaAs interlayer thickness between 0 and 1.0 ML. Moreover, the GaAs interlayer allows the control of the As∕P exchange reaction, reducing the QD height for increased GaAs thicknesses above 1.0 ML, and decreases the QD composition intermixing, producing almost pure InAs QDs.

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