Open AccessModeling of amorphous InGaZnO4 thin film transistors and their subgap density of states
Author(s) -
HsingHung Hsieh,
Toshio Kamiya,
Kenji Nomura,
Hideo Hosono,
ChungChih Wu
Publication year - 2008
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2857463
Subject(s) - thin film transistor , density of states , amorphous solid , materials science , condensed matter physics , subthreshold conduction , transistor , optoelectronics , charge carrier density , subthreshold slope , threshold voltage , nanotechnology , physics , voltage , chemistry , quantum mechanics , crystallography , doping , layer (electronics)
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