Open AccessHf O 2 gate dielectric on (NH4)2S passivated (100) GaAs grown by atomic layer deposition
Author(s) -
P. T. Chen,
Yun Sun,
E. Kim,
Paul C. McIntyre,
Wilman Tsai,
M. Garner,
P. Pianetta,
Yoshio Nishi,
Chi On Chui
Publication year - 2008
Publication title -
journal of applied physics
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.2838471
Subject(s) - passivation , hafnia , atomic layer deposition , analytical chemistry (journal) , materials science , transmission electron microscopy , dielectric , layer (electronics) , oxide , chemical vapor deposition , sulfur , optoelectronics , inorganic chemistry , chemistry , nanotechnology , metallurgy , cubic zirconia , ceramic , chromatography
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