Synthesis and characterization of smooth ultrananocrystalline diamond films via low pressure bias-enhanced nucleation and growth | Zendy

Y. C. Chen | Zendy; Xiaoyan Zhong | Zendy; Andrew R. Konicek | Zendy; David S. Grierson | Zendy; NyanHwa Tai | Zendy; INan Lin | Zendy; B. Kabius | Zendy; J. Hiller | Zendy; Anirudha V. Sumant | Zendy; Robert W. Carpick | Zendy; Orlando Auciello | Zendy

Open Access

Synthesis and characterization of smooth ultrananocrystalline diamond films via low pressure bias-enhanced nucleation and growth

Author(s) -

Y. C. Chen,

Xiaoyan Zhong,

Andrew R. Konicek,

David S. Grierson,

NyanHwa Tai,

INan Lin,

B. Kabius,

J. Hiller,

Anirudha V. Sumant,

Robert W. Carpick,

Orlando Auciello

Publication year - 2008

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2838303

Subject(s) - nucleation , diamond , materials science , transmission electron microscopy , nanotechnology , synchrotron , nanostructure , thin film , characterization (materials science) , chemistry , composite material , optics , physics , organic chemistry

This letter describes the fundamental process underlying the synthesis of ultrananocrystalline diamond (UNCD) films, using a new low-pressure, heat-assisted bias-enhanced nucleation (BEN)/bias enhanced growth (BEG) technique, involving H2∕CH4 gas chemistry. This growth process yields UNCD films similar to those produced by the Ar-rich/CH4 chemistries, with pure diamond nanograins (3–5nm), but smoother surfaces (∼6nm rms) and higher growth rate (∼1μm∕h). Synchrotron-based x-Ray absorption spectroscopy, atomic force microscopy, and transmission electron microscopy studies on the BEN-BEG UNCD films provided information critical to understanding the nucleation and growth mechanisms, and growth condition-nanostructure-property relationships.

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