Erratum: “Influence of N on the electronic properties of GaAsN alloy films and heterostructures” [J. Appl. Phys. 102, 103710 (2007)]
Author(s) -
M. Reason,
Y. Jin,
H. A. McKay,
Niall M. Mangan,
Dan Mao,
R. S. Goldman,
X. Bai,
Çağlıyan Kurdak
Publication year - 2008
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.2832754
Subject(s) - heterojunction , alloy , materials science , condensed matter physics , optoelectronics , physics , metallurgy
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