Open AccessAcceptor levels in GaSe:In crystals investigated by deep-level transient spectroscopy and photoluminescence
Author(s) -
Yunlong Cui,
Ryan Dupere,
A. Bürger,
D. Johnstone,
Krishna C. Mandal,
Sheila Payne
Publication year - 2008
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.2831130
Subject(s) - deep level transient spectroscopy , indium , acceptor , photoluminescence , gallium , materials science , vacancy defect , exciton , spectroscopy , doping , band gap , optoelectronics , chemistry , condensed matter physics , crystallography , silicon , physics , quantum mechanics , metallurgy
Deep-acceptor levels associated with indium in indium-doped GaSe crystals have been measured. High-quality Schottky diodes of GaSe:In have been fabricated and characterized using current-voltage, capacitance-voltage, and deep-level transient spectroscopy (DLTS). Four DLTS peaks at 127, 160, 248, and 319K, corresponding to 0.21, 0.22, 0.44, and 0.74eV above the valence band, were well resolved and assigned to be an indium-on-gallium antisite (InGa), a gallium vacancy (VGa), an indium gallium vacancy complex (VGa-In), and a native defect associated with stacking fault or dislocation, respectively. Low-temperature photoluminescence (PL) spectroscopy measure-ments were performed on GaSe and GaSe:In crystals. The ground and the first excited states of the free exciton emissions were identified and the band-gap energies were determined. The results that the peak of exciton bound to acceptor (A0,X) disappeared and the peak of donor-acceptor pair appeared in GaSe crystal after indium doping are consistent with th...
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