Physical properties and efficiency of GaNP light emitting diodes | Zendy

J. Chamings | Zendy; Salman Ahmed | Zendy; Stephen J. Sweeney | Zendy; V. A. Odnoblyudov | Zendy; C. W. Tu | Zendy

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Physical properties and efficiency of GaNP light emitting diodes

Author(s) -

J. Chamings,

Salman Ahmed,

Stephen J. Sweeney,

V. A. Odnoblyudov,

C. W. Tu

Publication year - 2008

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2830696

Subject(s) - light emitting diode , optoelectronics , materials science , photocurrent , band gap , diode , electroluminescence , leakage (economics) , wide bandgap semiconductor , nanotechnology , layer (electronics) , economics , macroeconomics

GaNP/GaP is promising for yellow-amber-red light emitting diodes (LEDs). In this study, pressure and temperature dependent electroluminescence and photocurrent measurements on bulk GaP/GaN0.006P0.994/GaP LED structures are presented. Below similar to 110 K, emission is observed from several localized nitrogen states. At room temperature, the band-edge energy increases weakly with pressure at a rate of +1.6 meV/kbar, substantially lower than the Gamma band gap of GaP (+9.5 meV/kbar). Thus, despite the multiplicity of nitrogen levels, the band anticrossing model reasonably describes this system based on an average of the nitrogen states. Furthermore, carrier leakage into the X minima of GaP reduces the efficiency in GaNP-LEDs with increasing pressure.

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