Interface properties of Pb∕InAs planar structures for Andreev spectroscopy | Zendy

F. Magnus | Zendy; K. A. Yates | Zendy; S. K. Clowes | Zendy; Y. Miyoshi | Zendy; Y. Bugoslavsky | Zendy; L. F. Cohen | Zendy; A. Aziz | Zendy; Gavin Burnell | Zendy; M. G. Blamire | Zendy; P. Josephs-Franks | Zendy

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Interface properties of Pb∕InAs planar structures for Andreev spectroscopy

Author(s) -

F. Magnus,

K. A. Yates,

S. K. Clowes,

Y. Miyoshi,

Y. Bugoslavsky,

L. F. Cohen,

A. Aziz,

Gavin Burnell,

M. G. Blamire,

P. Josephs-Franks

Publication year - 2008

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2828979

Subject(s) - planar , spectroscopy , interface (matter) , andreev reflection , materials science , scattering , condensed matter physics , fabrication , spin (aerodynamics) , semiconductor , optoelectronics , physics , computer science , optics , superconductivity , quantum mechanics , medicine , computer graphics (images) , alternative medicine , pathology , capillary number , capillary action , composite material , thermodynamics

For Andreev spectroscopy to be a useful tool to detect spin accumulation in semiconductors, we show by simulation that there is a maximum value for the interface scattering parameter that can be tolerated. Three different fabrication routes for Pb∕InAs planar junctions are explored and we find that the “etch-back” processing strategy is the most promising. Using the parameters extracted from the spectroscopic analysis, we find that the interface properties fall into four different regimes of behavior.

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