Open AccessLow temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors
Author(s) -
C.S. Beer,
Terry Whall,
E. H. C. Parker,
D. R. Leadley,
Brice De Jaeger,
G. Nicholas,
Paul Zimmerman,
Marc Meuris,
S. Szostak,
Grzegorz Głuszko,
Lidia Łukasiak
Publication year - 2007
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2828134
Subject(s) - materials science , germanium , electron mobility , surface roughness , field effect transistor , threshold voltage , transistor , semiconductor , mosfet , oxide , condensed matter physics , atmospheric temperature range , optoelectronics , analytical chemistry (journal) , chemistry , silicon , voltage , electrical engineering , composite material , physics , chromatography , metallurgy , engineering , meteorology
Effective mobility measurements have been made at 4.2 K on high performance high-k gated germanium p-type metal-oxide-semiconductor field effect transistors with a range of Ge/gate dielectric interface state densities. The mobility is successfully modelled by assuming surface roughness and interface charge scattering at the SiO2 interlayer/Ge interface. The deduced interface charge density is approximately equal to the values obtained from the threshold voltage and subthreshold slope measurements on each device. A hydrogen anneal reduces both the interface state density and the surface root mean square roughness by 20%.
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