Open AccessPolarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires
Author(s) -
Abhilasha Mishra,
Lyubov V. Titova,
Thang B. Hoang,
Howard E. Jackson,
Leigh M. Smith,
J.M. Yarrison-Rice,
Youngjo Kim,
Hannah J. Joyce,
Q. Gao,
Hark Hoe Tan,
C. Jagadish
Publication year - 2007
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2828034
Subject(s) - nanowire , wurtzite crystal structure , photoluminescence , materials science , condensed matter physics , polarization (electrochemistry) , semiconductor , band gap , optoelectronics , chemistry , physics , zinc , metallurgy
We use polarization-resolved and temperature-dependent photoluminescence of single zincblende (ZB) (cubic) and wurtzite (WZ) (hexagonal) InP nanowires to probe differences in selection rules and bandgaps between these two semiconductor nanostructures. The WZ nanowires exhibit a bandgap 80 meV higher in energy than the ZB nanowires. The temperature dependence of the PL is similar but not identical for the WZ and ZB nanowires. We find that ZB nanowires exhibit strong polarization parallel to the nanowire axis, while the WZ nanowires exhibit polarized emission perpendicular to the nanowire axis. This behavior is interpreted in terms of the different selection rules for WZ and ZB crystal structures. © 2007 American Institute of Physics
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