Open AccessElectrical and optical properties of phosphorus-doped p-type ZnO films grown by metalorganic chemical vapor deposition
Author(s) -
Xinhua Pan,
Jie Jiang,
Y. J. Zeng,
Haiping He,
Li Zhu,
Zhihong Ye,
Binghui Zhao,
Xiaoqing Pan
Publication year - 2008
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.2828017
Subject(s) - chemical vapor deposition , thin film , x ray photoelectron spectroscopy , doping , photoluminescence , acceptor , materials science , analytical chemistry (journal) , electrical resistivity and conductivity , chemical state , conductivity , chemistry , optoelectronics , nanotechnology , chemical engineering , organic chemistry , condensed matter physics , physics , electrical engineering , engineering
P-doped p-type ZnO thin films have been grown by metalorganic chemical vapor deposition. By modulating the P evaporating temperature, p-type conductivity can be controlled due to the different P content incorporated into the ZnO films. The P-doped p-type ZnO thin films are of high optical quality, as indicated by low-temperature photoluminescence. P-related acceptor state with an energy level of 163 meV is identified from free-to-neutral-acceptor transitions. In addition, x-ray photoelectron spectroscopy confirms that only one chemical bonding state of P exists in the P-doped ZnO thin films. (C) 2008 American Institute of Physics.status: publishe
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