Time-of-flight studies on TiO2/CuInS2 heterojunctions | Zendy

Joris Hofhuis | Zendy; J. Schoonman | Zendy; Albert Goossens | Zendy

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Time-of-flight studies on TiO2/CuInS2 heterojunctions

Author(s) -

Joris Hofhuis,

J. Schoonman,

Albert Goossens

Publication year - 2008

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.2826685

Subject(s) - heterojunction , semiconductor , materials science , depletion region , electron , drop (telecommunication) , space charge , layer (electronics) , time of flight , electron density , optoelectronics , condensed matter physics , analytical chemistry (journal) , chemistry , nanotechnology , optics , physics , electrical engineering , chromatography , quantum mechanics , engineering

Time-of-Flight (TOF) measurements have been performed on n-type TiO2/p-type CuInS2 heterojunctions. The TiO2 film thickness has been varied between 200 and 400 nm, while the CuInS2 film thickness has been fixed at 500 nm. The TOF response can be accurately modeled, if the potential drop across the p-n heterojunction with a large density of interface states is properly accounted for. Also electron transport in a space-charge region for a not fully depleted semiconductor has to be considered. The electron mobility in TiO2 is found to be 10?2?cm2?V?1?s?1, independent of the TiO2 layer thickness. The interface-state densities are 5×1011, 2×1012, and 6×1012?eV?1?cm?2 for 200, 300, and 400 nm thick TiO2 films, respectively

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