Incorporation of Sb in InAs∕GaAs quantum dots

Reactive epitaxy of Co on vicinal Si(111) surfaces is found to be a flexible and a convenient method for the preparation of dense arrays of Co silicide quantum dots. In the present work, submonolayer amounts of Co were deposited at 800 K on vicinal and flat Si surfaces, analyzing the resulting structures by scanning tunneling microscopy. On vicinal Si(111) surfaces with relatively narrow (~40–100 Å) terrace width, such reactive epitaxy leads to self-assembled arrays of CoSi2 quantum dots with a sharp size distribution function. In contrast, the growth of Co on flat Si(111) results in an inhomogeneous array of dots mixed with a variety of silicide phasesThis work was supported by the Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, US DOE (MFC, MV and SJP), the SANDiE European Network\udof Excellence (Contract No. NMP4-CT-2004-500101), the Spanish MEC (TEC2005-05781-C03-01 y 02, NAN2004-09109-C04-01, Consolider-Ingenio 2010 CSD2006-00019 and -0004), the CAM (S 0505ESP 0200), and the Junta de\udAndalucia (PAI research groups TEP-120 and TIC-145; Project No. PAI05-TEP-00383)Peer reviewe