Observation of oxide precipitates in InN nanostructures | Zendy

SoonYong Kwon | Zendy; Zaiyuan Ren | Zendy; Qian Sun | Zendy; Jung Han | Zendy; Young-Woon Kim | Zendy; Euijoon Yoon | Zendy; Bo Hyun Kong | Zendy; Hyung Koun Cho | Zendy; Il-Joong Kim | Zendy; Hyeonsik Cheong | Zendy

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Observation of oxide precipitates in InN nanostructures

Author(s) -

SoonYong Kwon,

Zaiyuan Ren,

Qian Sun,

Jung Han,

Young-Woon Kim,

Euijoon Yoon,

Bo Hyun Kong,

Hyung Koun Cho,

Il-Joong Kim,

Hyeonsik Cheong

Publication year - 2007

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2822396

Subject(s) - indium , oxide , materials science , metalorganic vapour phase epitaxy , nanostructure , chemical vapor deposition , chemical engineering , inorganic chemistry , nanotechnology , chemistry , optoelectronics , metallurgy , epitaxy , layer (electronics) , engineering

We observed the formation of oxide precipitates (bcc-In(2)O(3)) in InN nanostructures formed during metal-organic chemical vapor deposition (MOCVD) and/or subsequent postgrowth procedures in H(2) ambient. It was found that InN is extremely unstable in H(2) ambient and the activation energy of N(2) desorption of InN is measured to be similar to 0.28 eV, which is one order of magnitude smaller than that of reported value of InN in vacuum. Instability of InN nanostructures under H(2) ambient together with residual oxidant in the reactor facilitates the formation of indium oxide precipitates in the nanostructure matrix during MOCVD or the oxidation of residual indium at the surface, resulting in indium oxide dots.open3

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