Formation of Si nanocrystallites observed by in situ transmission electron microscopy and their effect on the enhancement of Er photoluminescence in Er-doped SiO2
Author(s) -
Naoki Fukata,
H. Morihiro,
Ryo Shirakawa,
K. Murakami,
Masanori Mitome,
Yoshio Bando
Publication year - 2007
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.2817639
Subject(s) - photoluminescence , transmission electron microscopy , annealing (glass) , materials science , doping , erbium , in situ , analytical chemistry (journal) , silicon , ion , electron paramagnetic resonance , scanning electron microscope , nanotechnology , optoelectronics , chemistry , nuclear magnetic resonance , metallurgy , composite material , physics , organic chemistry , chromatography
The formation of Si nanocrystallites (nc-Si) in erbium (Er)-dispersed SiOx (x<=2) films was investigated by in situ annealing while performing transmission electron microscopy measurements. The correlation between the formation of nc-Si and Er ion emissions was also comprehensively investigated by photoluminescence and electron spin resonance measurements. The results showed that the formation of nano-Si region with the suitable size is important for enhancement of Er ion emission
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