Open AccessMetalorganic chemical vapor deposition of InGaN layers on ZnO substrates
Author(s) -
Shen-Jie Wang,
Nola Li,
Eun-Hyun Park,
Siou-Cheng Lien,
Zhe Chuan Feng,
Adriana Valencia,
Jeff Nause,
Ian T. Ferguson
Publication year - 2007
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.2817482
Subject(s) - chemical vapor deposition , indium , materials science , photoluminescence , substrate (aquarium) , metalorganic vapour phase epitaxy , optoelectronics , wide bandgap semiconductor , band gap , impurity , diffraction , thin film , deposition (geology) , analytical chemistry (journal) , epitaxy , nanotechnology , layer (electronics) , chemistry , optics , paleontology , oceanography , organic chemistry , physics , chromatography , sediment , biology , geology
InGaN layers have been grown on (0001) ZnO substrates by metalorganic chemical vapor deposition utilizing a low temperature grown thin GaN buffer. Good quality InGaN films with a wide range of In composition were confirmed by high-resolution x-ray diffraction. Even at high indium concentrations no In droplets and phase separation appeared, possibly due to coherent growth of InGaN on ZnO. Photoluminescence showed broad InGaN-related emissions with peak energy lower than the calculated InGaN band gap, possibly due to Zn/O impurities diffused into InGaN from the ZnO substrate. An activation energy of 59 meV for the InGaN epilayer is determined.
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