Multilayer bipolar field-effect transistors | Zendy

Shinuk Cho | Zendy; Jonathan D. Yuen | Zendy; Jin Young Kim | Zendy; Kwanghee Lee | Zendy; Alan J. Heeger | Zendy; Sangyun Lee | Zendy

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Multilayer bipolar field-effect transistors

Author(s) -

Shinuk Cho,

Jonathan D. Yuen,

Jin Young Kim,

Kwanghee Lee,

Alan J. Heeger,

Sangyun Lee

Publication year - 2008

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2816913

Subject(s) - layer (electronics) , suboxide , materials science , fullerene , field effect transistor , transistor , optoelectronics , electron , nanotechnology , silicon , chemistry , voltage , organic chemistry , electrical engineering , physics , engineering , quantum mechanics

Field-effect transistors comprising a layer of regioregular poly(3-hexylthiophene) (rr-P3HT) separated from a parallel layer of the soluble fullerene,[6,6]-phenyl C-61-butyric acid methyl ester (PCBM) by a layer of titanium suboxide (TiOx), are fabricated by solution processing. Because the TiOx is an electron transporting material and a hole blocking material, this multilayer architecture operates either in the p-channel mode with holes in the rr-P3HT layer or in the n-channel mode with electrons in the PCBM layer.open201

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