Effect of using a high-purity Fe source on the transport properties of p-type β-FeSi2 grown by molecular-beam epitaxy | Zendy

Mitsushi Suzuno | Zendy; Y. Ugajin | Zendy; Sachiko Murase | Zendy; Takashi Suemasu | Zendy; Masahito Uchikoshi | Zendy; M. Isshiki | Zendy

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Effect of using a high-purity Fe source on the transport properties of p-type β-FeSi2 grown by molecular-beam epitaxy

Author(s) -

Mitsushi Suzuno,

Y. Ugajin,

Sachiko Murase,

Takashi Suemasu,

Masahito Uchikoshi,

M. Isshiki

Publication year - 2007

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.2816230

Subject(s) - molecular beam epitaxy , impurity , annealing (glass) , electron mobility , phonon , materials science , epitaxy , analytical chemistry (journal) , scattering , optoelectronics , chemistry , condensed matter physics , nanotechnology , optics , physics , metallurgy , organic chemistry , layer (electronics) , chromatography

Intentionally undoped p-type beta-FeSi2 thin films were grown on Si(111) substrates by molecular-beam epitaxy using low-purity (4N) and high-purity (5N) Fe sources to investigate the effect of using a high-purity Fe source on the electrical properties of beta-FeSi2. The hole mobility increased and the hole density decreased greatly as the annealing temperature and time were increased, particularly for the beta-FeSi2 films produced using 5N-Fe. The observed temperature dependence of the hole mobility was reproduced well by considering various carrier scattering mechanisms due to acoustic-phonon, polar-optical phonon, nonpolar-optical phonon, and ionized impurities

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