Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator

Redistribution during annealing of low-energy boron (B) implants in silicon on insulator (SOI) structures and in bulk Si has been investigated by comparing secondary ion mass spectrometry (SIMS) and simulated profiles. All the samples have been preamorphized with Ge at different implantation energies in order to investigate the effects of the position of the damage on B diffusion. Different B doses in the range between 2×1013 and 2×1015 cm−2 and annealing temperatures between 700 and 1100 °C have been investigated. All SIMS profiles show a B pileup in the first few nanometers of the Si matrix in proximity of the Si surface. The results of our simulations, performed on samples implanted at different doses (below and above the solid solubility), indicate that the B redistribution upon annealing can be explained with a simple model which considers the presence of traps in the surface region, without considering any asymmetric behavior of the dopant diffusion. The sink region is a few monolayers (1–2 nm) for ...