Conductance of Si nanowires formed by breaking Si-Si junctions | Zendy

Tomoki Iwanari | Zendy; Toyo Sakata | Zendy; Yutaka Miyatake | Zendy; Shu Kurokawa | Zendy; Akira Sakai | Zendy

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Conductance of Si nanowires formed by breaking Si-Si junctions

Author(s) -

Tomoki Iwanari,

Toyo Sakata,

Yutaka Miyatake,

Shu Kurokawa,

Akira Sakai

Publication year - 2007

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.2812563

Subject(s) - conductance , nanowire , condensed matter physics , materials science , silicon , polarity (international relations) , analytical chemistry (journal) , chemistry , nanotechnology , optoelectronics , physics , biochemistry , chromatography , cell

We have fabricated Si nanowires (NWs) by breaking Si-Si tip-sample junctions and studied their conductance for both p-n and p-p-type junctions at room temperature. Upon breaking the junction by retracting the Si tip from the Si clean surface, the conductance decreases by orders of magnitude from ∼1G0 to ∼10−6G0, where G0 is the quantum unit of conductance. The conductance histogram plotted against log(G∕G0) reveals peaklike structures for G>10−3G0, but becomes featureless for 10−6G0

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