Critical condition for growth of silicon nanowires
Author(s) -
F. Dhalluin,
P. Desré,
Martien I. den Hertog,
JeanLuc Rouvière,
P. Ferret,
P. Gentile,
T. Baron
Publication year - 2007
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.2811935
Subject(s) - nanowire , supersaturation , critical radius , radius , materials science , silicon , vapor–liquid–solid method , silicon nanowires , condensed matter physics , chemical physics , nanotechnology , optoelectronics , thermodynamics , chemistry , spheres , physics , computer security , astronomy , computer science
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom