Seed-layer mediated orientation evolution in dielectric Bi–Zn–Ti–Nb–O thin films | Zendy

Jin Young Kim | Zendy; Jun Hong Noh | Zendy; Sangwook Lee | Zendy; SungHun Yoon | Zendy; Chin Moo Cho | Zendy; Kug Sun Hong | Zendy; Hyun Suk Jung | Zendy; JungKun Lee | Zendy

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Seed-layer mediated orientation evolution in dielectric Bi–Zn–Ti–Nb–O thin films

Author(s) -

Jin Young Kim,

Jun Hong Noh,

Sangwook Lee,

SungHun Yoon,

Chin Moo Cho,

Kug Sun Hong,

Hyun Suk Jung,

JungKun Lee

Publication year - 2007

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2806193

Subject(s) - materials science , dielectric , thin film , pyrochlore , transmission electron microscopy , grain boundary , layer (electronics) , anisotropy , optoelectronics , composite material , optics , nanotechnology , microstructure , chemistry , organic chemistry , phase (matter) , physics

Highly (hhh) -oriented pyrochlore Bi-Zn-Ti-Nb-O (BZTN) thin films were fabricated via metal-organic decomposition using orientation template layers. The preferred orientation was ascribed to the interfacial layer, the lattice parameter of which is similar to BZTN. High-resolution transmission electron microscopy supported that the interfacial layer consists of Bi and Pt. The (hhh) -oriented thin films exhibited a highly insulating nature enabling feasible applications in electronic devices, particularly voltage tunable application. The BZTN thin films did not show any apparent dielectric anisotropy and the slightly enhanced dielectric properties were discussed in connection to the internal stress and the grain boundary effect. © 2007 American Institute of Physics

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