Angular dependence of the photoelectron energy distribution of InP(100) and GaAs(100) negative electron affinity photocathodes | Zendy

Dong-Ick Lee | Zendy; Yun Sun | Zendy; Zhi Liu | Zendy; Shiyu Sun | Zendy; P. Pianetta | Zendy

Open Access

Angular dependence of the photoelectron energy distribution of InP(100) and GaAs(100) negative electron affinity photocathodes

Author(s) -

Dong-Ick Lee,

Yun Sun,

Zhi Liu,

Shiyu Sun,

P. Pianetta

Publication year - 2007

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2805775

Subject(s) - photoelectric effect , electron , atomic physics , photon energy , range (aeronautics) , photon , physics , chemistry , materials science , optoelectronics , optics , nuclear physics , composite material

Energy distribution of the photoelectrons from InP(100) photocathodes are investigated with a photon energy range from 0.62eV to 2.76eV. When the photon energy is less than 1.8eV, only electrons emitted from the Gamma valley are observed in the energy distribution curves (EDC). At higher photon energies, electrons from the L valley are observed. The angular dependence of the electron energy distributions of InP and GaAs photocathodes are studied and compared. The electrons emitted from the L valley have a larger angular spread than the ones from the Gamma valley due to the larger effective mass of the L valley minimum.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research