Efficiency droop behaviors of InGaN∕GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness | Zendy

YungShin Li | Zendy; Yi-Ru Huang | Zendy; YiHsuan Lai | Zendy

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Efficiency droop behaviors of InGaN∕GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness

Author(s) -

YungShin Li,

Yi-Ru Huang,

YiHsuan Lai

Publication year - 2007

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2805197

Subject(s) - voltage droop , quantum efficiency , light emitting diode , optoelectronics , materials science , diode , quantum well , wide bandgap semiconductor , quantum , luminous efficacy , optics , physics , layer (electronics) , nanotechnology , voltage , laser , quantum mechanics , voltage divider

InGaN∕GaN multiple-quantum-well (MQW) light-emitting diodes with varied InGaN quantum well thicknesses are fabricated and characterized. The investigation of luminous efficiency versus current density reveals a variety of efficiency droop behaviors. It is found that the efficiency droop can be drastically reduced by increasing the quantum well thickness of the MQW structures. On the other hand, relative internal quantum efficiency (IQE) measurements indicate that a thinner well results to higher IQEs owing to the greater spatial overlap of electron and hole distribution functions.

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