Open AccessPhotoluminescence spectroscopy of nearly defect-free InN microcrystals exhibiting nondegenerate semiconductor behaviors
Author(s) -
ChingLien Hsiao,
HsuCheng Hsu,
LiChyong Chen,
ChienTing Wu,
ChunWei Chen,
Min Chen,
Li-Wei Tu,
KueiHsien Chen
Publication year - 2007
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2804568
Subject(s) - photoluminescence , wurtzite crystal structure , materials science , molecular beam epitaxy , spectroscopy , laser linewidth , condensed matter physics , photoluminescence excitation , wide bandgap semiconductor , high resolution transmission electron microscopy , transmission electron microscopy , semiconductor , epitaxy , molecular physics , optoelectronics , optics , chemistry , nanotechnology , physics , laser , layer (electronics) , zinc , metallurgy , quantum mechanics
Nearly defect-free InN microcrystals grown on Si(111) substrates have been realized by plasma-assisted molecular beam epitaxy. High-resolution transmission electron microscope images reveal that these microcrystals exhibit single-crystalline wurtzite structure. Low temperature photoluminescence (PL) shows a strong emission peak at 0.679eV with a very narrow linewidth of 17meV at excitation power density of 3.4W∕cm2. Temperature-dependent PL spectra follow the Varshni equation well, and peak energy blueshifts by ∼45meV from 300to15K. Power-density-dependent PL spectroscopy manifests direct near-band-edge transition. A low carrier density of 3×1017cm−3 has been estimated from PL empirical relation, which is close to the critical carrier density of the Mott transition of 2×1017cm−3.
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