The metal-insulator transition in VO2 studied using terahertz apertureless near-field microscopy | Zendy

Hui Zhan | Zendy; Victoria Astley | Zendy; Michael Hvasta | Zendy; Jason A. Deibel | Zendy; Daniel M. Mittleman | Zendy; YongSik Lim | Zendy

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The metal-insulator transition in VO2 studied using terahertz apertureless near-field microscopy

Author(s) -

Hui Zhan,

Victoria Astley,

Michael Hvasta,

Jason A. Deibel,

Daniel M. Mittleman,

YongSik Lim

Publication year - 2007

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2801359

Subject(s) - terahertz radiation , materials science , metal–insulator transition , near field scanning optical microscope , thin film , optical microscope , terahertz spectroscopy and technology , microscopy , phase transition , polarization (electrochemistry) , conductivity , optics , optoelectronics , condensed matter physics , scanning electron microscope , metal , nanotechnology , chemistry , physics , composite material , metallurgy

We have studied the metal-insulator transition in a vanadium dioxide (VO2) thin film using terahertz apertureless near-field optical microscopy. We observe a variation of the terahertz amplitude due to the phase transition induced by an applied voltage across the sample. The change of the terahertz signal is related to the abrupt change of the conductivity of the VO2 film at the metal-insulator transition. The subwavelength spatial resolution of this near-field microscopy makes it possible to detect signatures of micron-scale metallic domains in inhomogeneous VO2 thin films.

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