Methods to Characterize the Electrical and Mechanical Properties of Si Nanowires | Zendy

Qiliang Li | Zendy; Sang-Mo Koo | Zendy; Hao Xiong | Zendy; Monica D. Edelstein | Zendy; John S. Suehle | Zendy; Xiaoxiao Zhu | Zendy; Dimitris E. Ioannou | Zendy; Curt A. Richter | Zendy; David G. Seiler | Zendy; Alain C. Diebold | Zendy; Robert McDonald | Zendy; C. Michael Garner | Zendy; Daniel Herr | Zendy; Rajinder P. Khosla | Zendy; Erik M. Secula | Zendy

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Methods to Characterize the Electrical and Mechanical Properties of Si Nanowires

Author(s) -

Qiliang Li,

Sang-Mo Koo,

Hao Xiong,

Monica D. Edelstein,

John S. Suehle,

Xiaoxiao Zhu,

Dimitris E. Ioannou,

Curt A. Richter,

David G. Seiler,

Alain C. Diebold,

Robert McDonald,

C. Michael Garner,

Daniel Herr,

Rajinder P. Khosla,

Erik M. Secula

Publication year - 2007

Publication title -

aip conference proceedings

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.177

H-Index - 75

eISSN - 1551-7616

pISSN - 0094-243X

DOI - 10.1063/1.2799417

Subject(s) - nanowire , materials science , silicon nanowires , semiconductor , metrology , nanotechnology , nanoelectromechanical systems , silicon , optoelectronics , nanoparticle , optics , nanomedicine , physics

We report metrology methods to characterize nanowires. In this work, representative devices and test structures, including nanoelectromechanical switches, non‐volatile nanowire memory devices with SONOS structure, and both transfer‐length‐method and Kelvin test structures, have been developed to investigate the electrical and mechanical properties of the silicon nanowires. These methods and test structures can be readily applied to other (non‐Si) semiconductor nanowires/nanotubes.

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