Dopant Activation and Profile Determination with an Elastic Material Probe (EM-Probe) | Zendy

Robert Hillard | Zendy; C. Win Ye | Zendy; John Borland | Zendy; David G. Seiler | Zendy; Alain C. Diebold | Zendy; Robert McDonald | Zendy; C. Michael Garner | Zendy; Daniel Herr | Zendy; Rajinder P. Khosla | Zendy; Erik M. Secula | Zendy

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Dopant Activation and Profile Determination with an Elastic Material Probe (EM-Probe)

Author(s) -

Robert Hillard,

C. Win Ye,

John Borland,

David G. Seiler,

Alain C. Diebold,

Robert McDonald,

C. Michael Garner,

Daniel Herr,

Rajinder P. Khosla,

Erik M. Secula

Publication year - 2007

Publication title -

aip conference proceedings

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.177

H-Index - 75

eISSN - 1551-7616

pISSN - 0094-243X

DOI - 10.1063/1.2799380

Subject(s) - dopant , materials science , capacitance , dopant activation , optoelectronics , voltage , oxide , doping , electrode , electrical engineering , chemistry , metallurgy , engineering

In this paper, a new method is described for determining the near surface electrically active dopant density (NSURF). This is a powerful new method that allows for the monitoring of Activation for USJ Structures. The technique uses a non‐penetrating, non‐damaging probe that elastically deforms to form a contact on the bare or native oxide covered surfaces of USJ structures. Advanced Capacitance‐Voltage (CV) methods are used to determine the electrically active dopant, not carrier, density. The technique and physics will be described in detail along with several case studies.

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