Controllable modification of transport properties of single-walled carbon nanotube field effect transistors with in situ Al decoration | Zendy

Hyo-Suk Kim | Zendy; Byoung-Kye Kim | Zendy; Jinhee Kim | Zendy; Jeong Yong Lee | Zendy; Noejung Park | Zendy

Open Access

Controllable modification of transport properties of single-walled carbon nanotube field effect transistors with in situ Al decoration

Author(s) -

Hyo-Suk Kim,

Byoung-Kye Kim,

Jinhee Kim,

Jeong Yong Lee,

Noejung Park

Publication year - 2007

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2798590

Subject(s) - carbon nanotube , materials science , field effect transistor , nanotechnology , transistor , nanoparticle , in situ , optoelectronics , chemistry , electrical engineering , voltage , engineering , organic chemistry

We use an in situ Al decoration technique to control the transport characteristics of single-walled carbon nanotube field effect transistors (SWNT-FETs). Al nanoparticle decoration in a high vacuum caused the devices to change from p -type to n -type FETs, and subsequent exposure to the ambient atmosphere induced a gradual recovery of p -type character. In comparison with the bare SWNT-FETs under high vacuum, the channel-open devices with decorated Al particles exhibited reduced current under ambient conditions. However, selective Al decoration only at the contact resulted in an improved p -type current in ambient air.open182

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