Extraordinary optical gain from silicon implanted with erbium | Zendy

M. A. Lourenço | Zendy; R. Gwilliam | Zendy; K.P. Homewood | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Extraordinary optical gain from silicon implanted with erbium

Author(s) -

M. A. Lourenço,

R. Gwilliam,

K.P. Homewood

Publication year - 2007

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2797975

Subject(s) - silicon , erbium , materials science , optoelectronics , optical amplifier , laser , silicon photonics , hybrid silicon laser , gain , amplifier , optics , active laser medium , doping , laser power scaling , physics , cmos

Here we report on measurements of optical gain at 1.5μm in crystalline silicon. Gain is achieved by the incorporation of the rare earth erbium in silicon. A method was developed to enable the gain measurement in short silicon waveguides. Crucially, gain values obtained are significantly greater than previously supposed. We have measured a lower limit for the optical cross section for Er3+ of 5×10−19cm2, 30 times higher than previously anticipated. Given these higher values, this system now offers a realistic route to the production of electrically pumped silicon optical amplifier and laser devices using standard silicon process technology.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research