Evolution of InAs branches in InAs∕GaAs nanowire heterostructures
Author(s) -
Mohanchand Paladugu,
Jin Zou,
Graeme Auchterlonie,
Yanan Guo,
Y. Kim,
Hannah J. Joyce,
Qian Gao,
Hark Hoe Tan,
C. Jagadish
Publication year - 2007
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2790486
Subject(s) - nanowire , heterojunction , materials science , transmission electron microscopy , nanoparticle , gallium arsenide , indium arsenide , nanotechnology , optoelectronics , electron microscope , optics , physics
Branched nanowire heterostructures of InAsGaAs were observed during Au-assisted growth of InAs on GaAs nanowires. The evolution of these branches has been determined through detailed electron microscopy characterization with the following sequence: (1) in the initial stage of InAs growth, the Au droplet is observed to slide down the side of the GaAs nanowire, (2) the downward movement of Au nanoparticle later terminates when the nanoparticle encounters InAs growing radially on the GaAs nanowire sidewalls, and (3) with further supply of In and As vapor reactants, the Au nanoparticles assist the formation of InAs branches with a well-defined orientation relationship with GaAsInAs core/shell stems. We anticipate that these observations advance the understanding of the kink formation in axial nanowire heterostructures. © 2007 American Institute of Physics
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