Photoresponse properties of Al∕n-β-FeSi2 Schottky diodes using β-FeSi2 single crystals | Zendy

Teruhisa Ootsuka | Zendy; Y. Fudamoto | Zendy; Masato Osamura | Zendy; Takashi Suemasu | Zendy; Yunosuke Makita | Zendy; Yasuhiro Fukuzawa | Zendy; Yasuhiko Nakayama | Zendy

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Photoresponse properties of Al∕n-β-FeSi2 Schottky diodes using β-FeSi2 single crystals

Author(s) -

Teruhisa Ootsuka,

Y. Fudamoto,

Masato Osamura,

Takashi Suemasu,

Yunosuke Makita,

Yasuhiro Fukuzawa,

Yasuhiko Nakayama

Publication year - 2007

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2789706

Subject(s) - photocurrent , annealing (glass) , schottky diode , photoconductivity , materials science , optoelectronics , photon energy , diode , schottky barrier , photon , electron , analytical chemistry (journal) , crystallography , chemistry , optics , physics , quantum mechanics , composite material , chromatography

We have clearly observed photoresponse properties in an Al/n-beta-FeSi2 structure using beta-FeSi2 single crystals grown by chemical vapor transport. A photocurrent is observed for photons with energies greater than 0.68 eV. It increases sharply with increasing photon energy and attains a maximum at approximately 0.95 eV (1.31 µm). The photocurrent originated from the photoexcited electrons in the Al and the band-to-band photoexcited carriers in the beta-FeSi2 located under the Al contact. The photoresponsivity increased upon high-temperature annealing, reaching 58 mA/W at 0.95 eV after annealing at 800 °C for 8 h

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