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Laterally pumped GaAs/AlGaAs quantum wells as sources of broadband terahertz radiation
Author(s) -
Reeno Reeder,
Zoran Ikonić,
P. Harrison,
Andres Udal,
Enn Velmre
Publication year - 2007
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.2783779
Subject(s) - terahertz radiation , quantum well , radiation , electron , population inversion , electric field , optoelectronics , physics , population , gallium arsenide , materials science , condensed matter physics , optics , laser , quantum mechanics , sociology , demography
In this work we consider lateral current pumped GaAs/AlGaAs quantum wells as sources of incoherent terahertz radiation. The lateral field heats the electrons in a two-dimensional quantum layer and increases the population of higher subbands, hence also increasing the radiation power generated in spontaneous intersubband emission processes. Digitally graded quasi-parabolic and simple square quantum wells are considered, and the advantages of both types are discussed. Calculations at lattice temperatures of 77 K and 300 K, for electric fields up to 10 kV/cm, show that the optical output power of ∼100−200 W/m2 may be achieved for the 7 THz source. The main peak of the spectrum, at 7 THz, of the quasi-parabolic quantum well exceeds the black body radiation at 300 K by approximately a factor of two and by two orders of magnitude at 77 K.

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