Open AccessLow frequency noise in InAlAs/InGaAs modulation doped field effect transistors with 50-nm gate length
Author(s) -
M. E. Levinshteĭn,
S. L. Rumyantsev,
R. Tauk,
S. Boubanga,
N. Dyakonova,
W. Knap,
A. Shchepetov,
S. Bollaert,
Y. Rollens,
M. S. Shur
Publication year - 2007
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.2781087
Subject(s) - noise (video) , optoelectronics , materials science , field effect transistor , infrasound , flicker noise , leakage (economics) , transistor , voltage , physics , noise figure , cmos , image (mathematics) , quantum mechanics , artificial intelligence , computer science , acoustics , amplifier , economics , macroeconomics
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